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Infineon Technologies IRL7472L1TRPBF
Infineon Technologies

IRL7472L1TRPBF N-Channel MOSFET, 40V, 375A DirectFET

MPNIRL7472L1TRPBF
End of Life

Infineon StrongIRFET N-Channel MOSFET, 40 V Vdss, 375 A continuous drain, 0.59 mOhm Rds(on) at 10 V, DirectFET Isometric L8 package, -55°C to 175°C junction temperature.

$4.4Ref. price · indicative, final on quote
IRL7472L1TRPBF datasheet
PackagingDirectFET™ Isometric L8
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRL7472L1TRPBF Technical Specifications
ParameterValue
SeriesStrongIRFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C375A (Tc)
Power dissipation3.8W (Ta), 341W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric L8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs0.59mOhm @ 195A, 10V
Gate charge (Qg) (Max) @ vgs330 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds20082 pF @ 25 V

Product details

375 A continuous drain — sizing the power path

The IRL7472L1TRPBF: N-channel MOSFET rated 375 A continuous drain at 40 V Vdss.

Gate charge and drive voltage — what the driver must deliver

Total gate charge is 330 nC at 4.5 V. Rds(on) is specified at both 4.5 V and 10 V drive levels. Input capacitance Ciss is 20082 pF at 25 V Vds — a large input capacitance that slows the gate rise time unless the driver has enough peak current. The ±20 V maximum gate-to-source rating gives headroom for gate-drive overshoot in hard-switched topologies.

DirectFET Isometric L8 — thermal and footprint notes

The DirectFET Isometric L8 package has a large bottom-side drain contact that conducts heat into the PCB copper. Maximum power dissipation is 3.8 W at ambient and 341 W at the case.

Active lifecycle — no obsolescence pressure

The StrongIRFET series is a mature, volume-production line from Infineon, so supply continuity is predictable for new designs.

Frequently asked questions

Is IRL7472L1TRPBF compatible with DirectFET layout?

Yes — the IRL7472L1TRPBF uses the DirectFET Isometric L8 package, which is a standard Infineon DirectFET footprint. The package has a large solderable drain pad on the bottom that requires a matching copper land pattern on the PCB. The datasheet provides the recommended footprint dimensions; the thermal and electrical performance depends on the board copper thickness and via array under the pad.