375 A continuous drain — sizing the power path
The IRL7472L1TRPBF: N-channel MOSFET rated 375 A continuous drain at 40 V Vdss.
Gate charge and drive voltage — what the driver must deliver
Total gate charge is 330 nC at 4.5 V. Rds(on) is specified at both 4.5 V and 10 V drive levels. Input capacitance Ciss is 20082 pF at 25 V Vds — a large input capacitance that slows the gate rise time unless the driver has enough peak current. The ±20 V maximum gate-to-source rating gives headroom for gate-drive overshoot in hard-switched topologies.
DirectFET Isometric L8 — thermal and footprint notes
The DirectFET Isometric L8 package has a large bottom-side drain contact that conducts heat into the PCB copper. Maximum power dissipation is 3.8 W at ambient and 341 W at the case.
The StrongIRFET series is a mature, volume-production line from Infineon, so supply continuity is predictable for new designs.