What this MOSFET delivers on the board
The Infineon IRL6283MTRPBF is an N-Channel power MOSFET from the HEXFET and StrongIRFET series, designed for low-voltage, high-current switching applications. It handles a continuous switching current of 38 A and blocks up to 20 V drain-to-source. The 0.75 mOhm maximum on-resistance at a 10 V gate drive keeps conduction losses low in DC-DC converters, motor drives, and load switches. The junction temperature range of -40°C to 150°C covers industrial and automotive environments.
Rds(on) at 10 V — the number that sets the loss budget
At a 10 V gate-source drive and 50 A drain current, the IRL6283MTRPBF guarantees a maximum on-resistance of 0.75 mOhm. That sub-milliohm figure is what a designer uses to calculate I²R losses in a high-current rail. For a 38 A load, conduction loss stays under 1.1 W at the rated current, leaving thermal headroom in a 2.1 W package. The gate threshold voltage of 1.1 V at 100 µA means the device turns on cleanly with logic-level gate drives, though the 0.75 mOhm spec is only valid at 10 V.
Gate charge and switching speed
The total gate charge at 4.5 V is 158 nC. That is a moderate charge for a 38 A MOSFET — it tells the designer the gate driver must source enough peak current to charge that capacitance within the desired switching interval. At higher switching frequencies, the gate-drive power loss (Qg × Vgs × fsw) becomes significant. The ±12 V maximum gate-source voltage gives margin for gate-drive overshoot in hard-switched topologies.
Lifecycle and sourcing posture
That means it can be specified into new designs without obsolescence risk.