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IRL530NSTRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-Channel MOSFET, IRL530NSTRLPBF, 100 V drain-source, 17 A continuous drain, 100 mOhm Rds(on) at 10 V gate drive, D2PAK (TO-263) surface-mount package, -55°C to 175°C junction temperature.

Infineon Technologies IRL530NSTRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

IRL530NSTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation3.8W (Ta), 79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 25 V

Technical details

The IRL530NSTRLPBF: The junction temperature range is -55°C to 175°C.

Gate drive and switching — sizing the driver for the 34 nC gate charge

Gate charge is 34 nC at 5 V. Drive voltage range for rated Rds(on) is 4 V to 10 V. Input capacitance is 800 pF at 25 V.

Package and thermal — the D2PAK tab is the drain

The IRL530NSTRLPBF comes in a D2PAK (TO-263-3) surface-mount package. The datasheet specifies 79 W power dissipation at the case — that figure assumes the tab is held at 25 °C, which requires a substantial copper area or a heatsink on the back side of the board.

IRL530NSTRLPBF
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