IRL40SC209

Infineon Technologies · StrongIRFET™ Series

Infineon StrongIRFET™ N-Channel MOSFET, IRL40SC209, 40V Vdss, 478A Id, 0.8mOhm Rds(on) at 100A, 267nC Qg, D2PAK-7 (TO-263-7), -55°C to 175°C.

Infineon Technologies IRL40SC209
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRL40SC209 specifications
Parameter / AttributeSpecification / Value
SeriesStrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C478A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs0.8mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs267 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds15270 pF @ 25 V

Technical details

StrongIRFET™ N-channel for high-current switching

The Infineon IRL40SC209 is an N-channel MOSFET from the StrongIRFET™ series, built for low-voltage, high-current power switching. The 267 nC gate charge at 4.5 V sets the drive requirement — a gate driver capable of sourcing several amps is needed to keep switching losses in check at higher frequencies.

Thermal and package reality for the layout

The 375 W power dissipation rating is only achievable with the tab soldered to a substantial thermal pad and adequate board-level cooling.

IRL40SC209
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