Infineon Technologies · HEXFET® Series
Infineon HEXFET® N-Channel MOSFET, 30V Drain-Source, 140A Continuous Drain, 6mOhm Rds(on) at 10V, D2PAK (TO-263), -55°C to 175°C Junction, ROHS3 Compliant.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 140A (Tc) |
| Power dissipation | 3.8W (Ta), 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 71A, 10V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 5000 pF @ 25 V |
Maximum gate threshold is 1 V at 250 µA.
Junction temperature range spans -55°C to 175°C.
Surface-mount D2PAK, three leads plus the tab. The tab is the drain — common to the centre lead in the TO-263 footprint.
ROHS3 compliant, so it meets the current exemption framework for EU and global BOMs.
