IRL3803SPBF, Infineon HEXFET® series, N-Channel Power MOSFET, 30 V drain-source, 140 A switching current, 6 mOhm Rds(on) max at 71 A, 10 V gate drive, 140 nC gate charge at 4.5 V, surface mount D²Pak (TO-263), -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±16 V |
| Power | 3.8 |
| Package_type | Bulk |
| Capacitance_uf | 0.005 |
| Status | Active |
| Supply voltage | 30.0 |
| Vgs(Th) (Max) @ id | 1 V @ 250µA |
| Switching current | 140.0 |
| Rds on (Max) @ id, vgs | 6mOhm @ 71 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 4.5 V |
The Infineon IRL3803SPBF is a HEXFET N-channel power MOSFET rated for 30 V drain-source and 140 A switching current. The 6 mOhm max on-resistance at 71 A and 10 V gate drive determines conduction loss.
The 175°C maximum junction temperature is the absolute ceiling.
Buyers need to compare pricing across distributors to minimize project cost.
Availability directly impacts production timelines and procurement decisions.
Engineers require detailed electrical and thermal data to validate the design.
Sourcing flexibility is key when the exact part is unavailable or on long lead time.
Accurate specs ensure the MOSFET meets the application's voltage, current, and Rds(on) requirements.