IRL3705NPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-Channel MOSFET, IRL3705NPBF, 55 V Vdss, 89 A continuous drain current, 10 mOhm Rds(on) max at 46 A, TO-220AB through-hole package.

Infineon Technologies IRL3705NPBF
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[IN STOCK] In Stock: 87 pcs
$2.55/ pc

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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRL3705NPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C89A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds3600 pF @ 25 V

Technical details

10 mOhm at 46 A — the switching-loss anchor

The IRL3705NPBF: The 98 nC gate charge at 5 V sets the switching-loss budget.

Gate threshold and drive-voltage window

175 °C junction — military-grade thermal headroom

Input capacitance and switching speed

The input capacitance Ciss is 3600 pF typical at 25 V drain-source.

The ROHS3 compliance is confirmed. The TO-220AB package is widely stocked across the spot market, but the date-code traceability and laser-etch consistency should be verified on any gray-market lot — the HEXFET series is a common target for re-marked stock.

IRL3705NPBF
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