Infineon HEXFET N-Channel MOSFET, IRL2505PBF, 55V Vdss, 104A Id, 8mOhm Rds(on) at 10V, TO-220-3 through-hole, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 104A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 54A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 5000 pF @ 25 V |
The IRL2505PBF: Gate charge is 130 nC at 5 V. Input capacitance Ciss is 5000 pF at 25 V drain-source, which sets the gate-drive impedance requirement for clean switching edges.
The TO-220AB (TO-220-3) package accepts a standard screw-mount heatsink; the tab is the drain terminal, so the heatsink pad must be electrically isolated or the system must tolerate a live tab.
Yes, the part is ROHS3 compliant per the manufacturer listing.