The 7 mOhm maximum on-resistance at 60 A with 10 V gate drive is the number that sets conduction loss; at 4.5 V drive the Rds(on) is higher, so the gate-drive voltage needs checking against the actual load current. Gate charge is 60 nC at 4.5 V, which drives the switching loss and the gate-driver peak current requirement.
Surface-mount in a D2PAK (TO-263-3) package — the standard large-footprint power MOSFET package for reflow assembly. Power dissipation is rated 3.8 W at ambient and 180 W at case temperature, so the thermal pad and PCB copper area are the limiting factor for sustained current.
