Infineon Technologies IRL2203NPBF-INF
MPNIRL2203NPBF-INF
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 116A (Tc) |
| Power dissipation | 180W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Bulk |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 7mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3290 pF @ 25 V |