40 V, 75 A, 3.1 mOhm — the conduction-loss floor
The Infineon IRL1404ZSTRLPBF is an N-channel HEXFET power MOSFET in a D2PAK (TO-263) surface-mount package. It is rated for a drain-to-source voltage of 40 V and a continuous drain current of 75 A at 25 °C case temperature. The headline figure is the 3.1 mOhm maximum on-resistance at a 10 V gate drive — this sets the conduction loss floor for a 12 V or 24 V bus rail.
Gate charge and drive voltage — what the driver sees
Total gate charge is 110 nC at 5 V, with the drive voltage range spanning 4.5 V to 10 V for the on-resistance spec. At a 100 kHz switching frequency, the gate-drive power requirement is roughly 110 nC × 5 V × 100 kHz = 55 mW — well within a standard gate-driver IC's capability. The 5080 pF input capacitance at 25 V drain-source tells the layout engineer the gate trace must be kept short to avoid ringing.
175°C junction — wider thermal headroom
The operating junction temperature range runs from -55 °C to 175 °C, which is 25 °C above the typical 150 °C ceiling for many power MOSFETs. This extra margin matters in engine-bay electronics, industrial motor drives, or any enclosure where ambient air hits 85 °C and the heatsink is undersized. The 230 W power dissipation at case temperature is the theoretical max; real dissipation is set by the thermal resistance of the board copper and any attached heatsink.
D2PAK footprint — layout checklist
The 0.50 mm lead pitch is standard for this package; a 4-layer board with thermal vias under the tab is typical for the 75 A rating.