IRL1404STRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-Channel MOSFET, IRL1404STRLPBF, 40 V Vdss, 160 A continuous drain, 4 mOhm Rds(on) at 10 V gate drive, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IRL1404STRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRL1404STRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.3V, 10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation3.8W (Ta), 200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 95A, 10V
Gate charge (Qg) (Max) @ vgs140 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds6600 pF @ 25 V

Technical details

The D2PAK (TO-263) package puts the drain on the exposed tab, so the thermal path runs through the board copper, not the air. This is a part you solder down with a wide drain pad and plenty of vias, not something you socket in the field.

Gate charge and drive voltage — sizing the gate driver

Gate charge is 140 nC at 5 V, and the drive voltage range for minimum Rds(on) is 4.3 V to 10 V.

Temperature range and derating — where this FET lives

The 175°C max is the ceiling for the silicon, not the solder joint — the D2PAK lead finish is matte tin, so the board-level reliability at sustained high temperature depends on the PCB laminate and solder alloy. The 160 A rating is at Tc=25°C; at 100°C case temperature you derate to about 110 A, still a lot of current for a surface-mount package if the board copper does the heat spreading.

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