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Infineon Technologies IRL1404PBF-INF

IRL1404PBF-INF N-Channel MOSFET, 40V 160A TO-220AB

MPNIRL1404PBF-INF
End of Life

Infineon HEXFET IRL1404PBF-INF, N-Channel MOSFET, 40V Vdss, 160A Id, 4mOhm Rds(on) at 10V, 140nC Qg, TO-220AB, -55 to 175°C.

$1.06Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRL1404PBF-INF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 95A, 10V
Gate charge (Qg) (Max) @ vgs140 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds6590 pF @ 25 V

Product details

40V, 160A N-channel — the HEXFET that handles the heavy lift

The Infineon IRL1404PBF-INF is a 40V N-channel HEXFET power MOSFET in a through-hole TO-220AB package, rated for a continuous drain current of 160A at 25°C case temperature.

Gate charge and switching — the 140 nC trade-off

Total gate charge is 140 nC at 5V gate drive. For a 100 kHz hard-switched converter, that translates to about 14 mA average gate-drive current — within the capability of most dedicated MOSFET drivers, but a factor to budget in the gate-drive supply design. The input capacitance (Ciss) of 6590 pF at 25V drain-source sets the Miller plateau slope and the switching loss profile.

Thermal and mechanical — TO-220AB in a -55 to 175°C window

The TO-220AB package dissipates up to 200W at the case (Tc), but the real thermal limit depends on the heatsink and airflow. Operating junction temperature spans -55°C to 175°C, which covers automotive under-hood and industrial environments. The through-hole mounting simplifies prototyping and rework, but the tab is the drain — the heatsink pad must be electrically isolated or the system must tolerate a live tab.

Lifecycle and compliance — active production, ROHS3

It is ROHS3 compliant, with no restricted substances per EU directive. The series is Infineon's HEXFET family, a long-running trench MOSFET platform with consistent datasheet parameters across date codes.

Frequently asked questions

What is the Rds(on) of IRL1404PBF-INF at 10V?

The maximum on-resistance is 4mOhm at 95A drain current with 10V gate drive. This is the figure to use for conduction-loss calculations in the worst-case junction temperature range.

Is IRL1404PBF-INF RoHS compliant and lead-free?

Yes, the IRL1404PBF-INF is ROHS3 compliant, meeting the EU restriction of hazardous substances directive. No lead, mercury, cadmium, or other restricted materials are used in its construction.