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Infineon Technologies IRL1404PBF — Discrete Semiconductors
Infineon Technologies

IRL1404PBF HEXFET N-Channel MOSFET, 40 V, 160 A, 4 mOhm

MPNIRL1404PBF
Active

IRL1404PBF, HEXFET® N-Channel Power MOSFET, 40 V, 160 A, 4 mOhm @ 95 A, 10 V, ±20 V Vgs, TO-220 through-hole, -55°C to 175°C TJ.

$1.06Ref. price · indicative, final on quote
IRL1404PBF datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRL1404PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w200.0
Package_typeBulk
Capacitance_uf0.0066
Product_statusActive
Supply_voltage_v40.0
Vgs(Th) (Max) @ id3 V @ 250µA
Switching_current_a160.0
Rds on (Max) @ id, vgs4mOhm @ 95 A, 10 V
Gate charge (Qg) (Max) @ vgs140 nC @ 5 V

Product details

40 V, 160 A N-channel HEXFET — what the ratings mean for your BOM

The IRL1404PBF is an N-channel HEXFET power MOSFET rated for 40 V drain-source breakdown and 160 A continuous drain current. The on-resistance is 4 mOhm maximum at 95 A drain current with a 10 V gate drive. The gate threshold voltage is specified at 3 V max with 250 µA drain current.

Thermal and switching budget

Junction temperature range spans -55°C to 175°C. The total gate charge is 140 nC at 5 V. Maximum power dissipation is 200 W.

Sourcing and lifecycle

No last-time-buy risk for new designs.

Frequently asked questions

What is the on-resistance of IRL1404PBF?

The maximum on-resistance is 4 mOhm at 95 A drain current with a 10 V gate drive.