IRL1404PBF, HEXFET® N-Channel Power MOSFET, 40 V, 160 A, 4 mOhm @ 95 A, 10 V, ±20 V Vgs, TO-220 through-hole, -55°C to 175°C TJ.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 200.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0066 |
| Status | Active |
| Supply voltage | 40.0 |
| Vgs(Th) (Max) @ id | 3 V @ 250µA |
| Switching current | 160.0 |
| Rds on (Max) @ id, vgs | 4mOhm @ 95 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 5 V |
The IRL1404PBF is an N-channel HEXFET power MOSFET rated for 40 V drain-source breakdown and 160 A continuous drain current. The on-resistance is 4 mOhm maximum at 95 A drain current with a 10 V gate drive. The gate threshold voltage is specified at 3 V max with 250 µA drain current.
The total gate charge is 140 nC at 5 V. Maximum power dissipation is 200 W.
No last-time-buy risk for new designs.
The maximum on-resistance is 4 mOhm at 95 A drain current with a 10 V gate drive.