Infineon IRL100HS121 N-Channel MOSFET, 100 V Vdss, 11 A continuous drain, 42 mOhm Rds(on) at 10 V, 6-PQFN (2x2) DFN2020 package, -55°C to 175°C operating temperature.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 11.5W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-PowerVDFN |
| Vgs(th) (Max) @ id | 2.3V @ 10µA |
| Rds on (Max) @ id, vgs | 42mOhm @ 6.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 440 pF @ 50 V |
The Infineon IRL100HS121 is a 100 V, 11 A N-channel MOSFET in a 6-PQFN (2x2) package. The 42 mOhm maximum on-resistance at Vgs=10 V and 6.7 A sets the conduction loss floor; the 11.5 W package power rating handles the dissipation.
The drain pad is the only orientation clue; the pin 1 marker is a small dot on the top surface, so mark the board silkscreen before removal.
ROHS3 compliant, clearing the current EU RoHS directive without an exemption.
The IRL100HS121 is listed as active — Infineon is currently manufacturing it with no end-of-life notice. It is ROHS3 compliant.
The maximum Rds(on) is 42 mOhm at Vgs=10 V and Id=6.7 A. The drive voltage range for minimum Rds(on) is 4.5 V to 10 V.