IRL1004PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-channel MOSFET, IRL1004PBF, 40 V drain-source, 130 A continuous drain, 6.5 mOhm Rds(on) at 10 V, TO-220AB through-hole, -55°C to 175°C junction temperature.

Infineon Technologies IRL1004PBF
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Technical specifications

IRL1004PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 78A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds5330 pF @ 25 V

Technical details

The IRL1004PBF specifies a maximum gate charge of 100 nC at 4.5 V, with the Rds(on) characterised at both 4.5 V and 10 V drive voltages. At a 100 kHz switching frequency, the 100 nC gate charge draws about 10 mA from the driver — a figure that fits within the output capability of most standard gate-driver ICs, but the designer should verify the driver's peak current and average power dissipation for the target switching rate. The 6.5 mOhm Rds(on) is specified at 10 V drive; at 4.5 V the on-resistance will be higher, so the 10 V rail is preferred for minimum conduction loss.

Thermal and temperature range — the junction budget

The 200 W maximum power dissipation at case temperature is a package-limited figure; the real thermal budget depends on the heatsink and airflow, and the 130 A continuous rating requires a case temperature held at 25°C — derate aggressively above that.

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