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Infineon Technologies IRG7PH46UEP

IRG7PH46UEP IGBT, 1200V, 130A, Trench, TO-247AD

MPNIRG7PH46UEP
End of Life

Infineon IRG7PH46UEP trench IGBT, 1200 V collector-emitter breakdown, 130 A continuous collector current, 220 nC gate charge, 469 W max power, TO-247AD through-hole package, -55°C to 175°C junction temperature.

$4.8Ref. price · indicative, final on quote
Infineon Technologies IRG7PH46UEP datasheet (PDF)
PackagingTO-247-3
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRG7PH46UEP specifications
ParameterValue
IGBT typeTrench
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown1200 V
Current - collector (Ic)130 A
Current - collector pulsed160 A
Power - max469 W
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Gate charge220 nC
CaseTO-247-3
Test condition600V, 40A, 10Ohm, 15V
Switching energy2.56mJ (on), 1.78mJ (off)
Td (on/off) @ 25°C45ns/410ns
Vce(on) (Max) @ vge, ic2V @ 15V, 40A

Product details

1200 V trench IGBT for hard-switched power stages

The Infineon IRG7PH46UEP is a 1200 V trench IGBT in a TO-247AD through-hole package, rated for 130 A continuous collector current with a pulsed capability of 160 A.

Switching losses and gate drive budget

Total gate charge is 220 nC. Switching energy at 600 V, 40 A, 10 Ohm gate resistor, 15 V drive is 2.56 mJ turn-on and 1.78 mJ turn-off.

Temperature range and thermal headroom

Maximum power dissipation is 469 W — the TO-247AD package with a suitable heatsink and forced airflow can handle that thermal load in continuous operation.

Frequently asked questions

What is the gate charge of IRG7PH46UEP?

Total gate charge is 220 nC, measured at the test condition of 600 V, 40 A, 10 Ohm gate resistor, 15 V gate drive.