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Infineon Technologies IRG4BC30SPBF-INF

IRG4BC30SPBF-INF IGBT, 600 V 34 A, TO-220AB, Active

MPNIRG4BC30SPBF-INF
End of Life

Infineon IRG4BC30SPBF-INF N-channel IGBT, 600 V Vces, 34 A Ic, 100 W Pd, TO-220AB through-hole package, -55 to 150 °C junction range.

$1.29Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRG4BC30SPBF-INF specifications
ParameterValue
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)34 A
Power - max100 W
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
CaseTO-220-3
Test condition480V, 18A, 23Ohm, 15V
Switching energy260µJ (on), 3.45mJ (off)
Td (on/off) @ 25°C22ns/540ns
Vce(on) (Max) @ vge, ic1.6V @ 15V, 18A

Product details

600 V / 34 A N-channel IGBT in TO-220AB

The Infineon IRG4BC30SPBF-INF is an N-channel IGBT rated for 600 V collector-emitter breakdown and 34 A continuous collector current, housed in a TO-220AB through-hole package. Maximum power dissipation is 100 W.

Conduction and switching losses

Switching energy is 260 µJ (turn-on) and 3.45 mJ (turn-off) under test conditions of 480 V, 18 A, 23 Ohm gate resistor, and 15 V gate drive. The turn-off energy dominates the total switching loss, so the usable switching frequency is limited by the thermal capacity of the heatsink at the target duty cycle.

Switching speed and gate drive

Turn-on delay time is 22 ns and turn-off delay time is 540 ns at 25 °C junction. The 540 ns turn-off delay, combined with the 3.45 mJ turn-off energy, means the IGBT is optimised for medium-frequency hard-switching applications — typically below 20 kHz — rather than high-frequency resonant converters. The standard input type requires a positive gate voltage for turn-on and zero or negative for turn-off; no integrated gate driver.

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