The IRFZ48NSTRLPBF: Gate charge totals 81 nC at 10 V, so a driver sourcing 1 A can switch the gate in about 81 ns.
Thermal and package — D2PAK mounting
The -55°C to 175°C operating range covers military and industrial environments.

Infineon HEXFET® IRFZ48NSTRLPBF, N-Channel MOSFET, 55V Vdss, 64A Id, 14mOhm Rds(on) at 10V, D2PAK (TO-263-3), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 64A (Tc) |
| Power dissipation | 3.8W (Ta), 130W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 32A, 10V |
| Gate charge (Qg) (Max) @ vgs | 81 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1970 pF @ 25 V |
The IRFZ48NSTRLPBF: Gate charge totals 81 nC at 10 V, so a driver sourcing 1 A can switch the gate in about 81 ns.
The -55°C to 175°C operating range covers military and industrial environments.
Yes, the 55 V drain-source rating and 64 A continuous drain current with 14 mOhm on-resistance make it suitable for low-voltage motor drives, DC-DC converters, and power switching up to about 30 A continuous with proper heatsinking.
The IRFZ48NSTRLPBF is the surface-mount D2PAK variant of the IRFZ48N, which is typically supplied in a through-hole TO-220 package. The electrical specs — 55 V, 64 A, 14 mOhm — are the same; the difference is the mounting and thermal interface.