16.5 mOhm Rds(on) at 28 A — the conduction loss ceiling
The IRFZ46NSTRLPBF is an N-channel HEXFET® power MOSFET from Infineon rated for 55 V drain-to-source and 53 A continuous drain current at a 25 °C case temperature. The gate charge totals 72 nC at 10 V, which determines the drive current needed to hit a given switching frequency.
175 °C junction — where this part lives
That 175 °C ceiling matters for designs where the MOSFET sits near a hot heatsink or inside a sealed enclosure — engine ECUs, industrial power stages, or downhole instrumentation. The maximum power dissipation is 107 W at the case, derated to 3.8 W in still air at 25 °C ambient, so the thermal path through the D2PAK tab to a copper plane or heatsink is what actually unlocks the current rating.
D2PAK footprint and sourcing posture
ROHS3 compliant.
