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Infineon Technologies IRFZ44ZSTRRPBF — Discrete Semiconductors

IRFZ44ZSTRRPBF N-Channel MOSFET, 55V 51A HEXFET, D2PAK

MPNIRFZ44ZSTRRPBF
NRND

Infineon IRFZ44ZSTRRPBF, HEXFET® N-Channel MOSFET, 55 V Vdss, 51 A Id, 13.9 mOhm Rds(on) at 10 V, D2PAK (TO-263), -55°C to 175°C junction temperature.

$1.6700Ref. price · indicative, final on quote
Infineon Technologies IRFZ44ZSTRRPBF datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFZ44ZSTRRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C51A (Tc)
Power dissipation80W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs13.9mOhm @ 31A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1420 pF @ 25 V

Product details

It is built with standard MOSFET (Metal Oxide) technology and packaged in a surface-mount D2PAK (TO-263-3) with an exposed tab for thermal management.

13.9 mOhm on-resistance — what it drives for the BOM

The maximum on-resistance of 13.9 mOhm, specified at a drain current of 31 A and a gate drive of 10 V, determines the conduction losses that set the thermal budget. At 31 A, the I²R loss reaches roughly 13.4 W, which must be dissipated through the D2PAK tab and PCB copper.

NRND — no longer recommended for new designs

This means Infineon has flagged it for eventual discontinuation, though it remains available in the supply channel for existing production runs and service repairs. For new designs, evaluate a current-production N-channel MOSFET in the same voltage class and package.

The input capacitance of 1420 pF at a drain-source voltage of 25 V is typical for a 55 V class device in this current range and influences the gate drive design.

Frequently asked questions

What is the replacement for IRFZ44ZSTRRPBF?

For new designs, choose a current-production 55 V N-channel MOSFET in a D2PAK package with comparable on-resistance and current rating.

What is the Rds(on) of IRFZ44ZSTRRPBF?

The maximum on-resistance is 13.9 mOhm, measured at a drain current of 31 A and a gate-to-source voltage of 10 V.

Is IRFZ44ZSTRRPBF obsolete?

It is not yet fully discontinued but is no longer recommended for new product designs.