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Infineon Technologies IRFZ44VZPBF — Discrete Semiconductors

IRFZ44VZPBF HEXFET N-Channel MOSFET, 60V 57A TO-220AB

MPNIRFZ44VZPBF
NRND

Infineon IRFZ44VZPBF HEXFET N-channel MOSFET, 60 V drain-source, 57 A continuous drain, 12 mOhm Rds(on) at 34 A, 10 V gate drive, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$1.8800Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFZ44VZPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C57A (Tc)
Power dissipation92W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 34A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1690 pF @ 25 V

Product details

60 V, 57 A N-channel power switch — TO-220-3 tab-mount

The IRFZ44VZPBF: It comes in a TO-220-3 through-hole package (TO-220AB) with the large copper tab that bolts to a heatsink or chassis for thermal management.

Gate charge and switching — driver budget

Total gate charge is 65 nC at 10 V. Input capacitance is 1690 pF at 25 V drain-source. Recommended drive voltage for lowest Rds(on) is 10 V. Maximum gate-source voltage is ±20 V.

Maximum junction temperature is 175°C.

NRND status — what it means for procurement

The IRFZ44VZPBF carries a Not Recommended for New Designs (NRND) lifecycle status. Existing BOM lines should be qualified against a pin-compatible replacement before the supply window closes.

Frequently asked questions

Is IRFZ44VZPBF obsolete?

It is still available through independent distribution but is not intended for new production builds. Plan a replacement qualification before the supply window closes.