The IRFZ44VZ is an International Rectifier HEXFET® N-channel power MOSFET in a through-hole TO-220-3 (TO-220AB) package. Gate charge is 65 nC at 10 V.
The 12 mOhm maximum on-resistance at 34 A and 10 V gate-source is the number that sizes the heatsink and sets the I²R loss in the power path. At 57 A continuous drain, the conduction loss at 12 mOhm is about 39 W, which the 92 W package dissipation limit can handle with adequate thermal management — a TO-220 bolted to a heatsink with thermal compound.
65 nC gate charge — switching speed budget
Input capacitance is 1690 pF at 25 V drain-source.
Obsolete — sourcing and replacement reality
For new designs or BOM continuity, the replacement path is not a direct pin-compatible drop-in from the same series — the IRFZ44VZ was a specific variant in the HEXFET family. If you are qualifying a replacement, the closest functional sibling in the same TO-220 footprint with 60 V / 57 A class ratings would be the IRFZ44N or IRFZ44Z, but verify gate charge, Rds(on), and temperature range against your switching frequency and thermal budget before committing the BOM line.
