International Rectifier HEXFET N-Channel MOSFET, 55 V drain-source, 49 A continuous drain, 17.5 mΩ Rds(on) at 10 V drive, D2PAK surface mount, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 49A (Tc) |
| Power dissipation | 3.8W (Ta), 94W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 17.5mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1470 pF @ 25 V |
The IRFZ44NSTRR carries an obsolete lifecycle status per the manufacturer.
The TO-263-3 (D²Pak) package with two leads and a tab is a surface-mount power package.
Qualification testing on the alternate is recommended before committing the BOM.
It comes in a D2PAK (TO-263-3) surface-mount package.