IRFZ44ESTRLPBF

Infineon Technologies

Infineon HEXFET® IRFZ44ESTRLPBF, N-Channel MOSFET, 60V Vdss, 48A Id, 23mOhm Rds(on) at 10V, D2PAK (TO-263AB), -55°C to 175°C.

Infineon Technologies IRFZ44ESTRLPBF
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[IN STOCK] In Stock: 222 pcs
$2.17/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFZ44ESTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1360 pF @ 25 V

Technical details

60 V, 48 A N-channel HEXFET® in D2PAK

The D2PAK (TO-263AB) surface-mount package suits automated assembly and moderate power dissipation up to 110 W when properly heatsinked through the tab.

This is the official warning: the manufacturer will not support new design-ins, and a last-time-buy window may already be closing or closed. For existing production, the part remains available through independent distribution, but any new BOM should target the recommended successor. No stock or lead-time number can be guaranteed here; the RFQ is the only reliable path.

At moderate switching frequencies (50–100 kHz), the 60 nC Qg is manageable with a standard totem-pole driver; above 200 kHz the gate-drive loss starts cutting into efficiency. The 4 V maximum threshold at 250 µA means a 5 V logic-level gate drive will turn the device on, but the 10 V drive voltage is needed to reach the minimum Rds(on) — a 5 V drive leaves the on-resistance roughly doubled, as the Rds(on) is specified at 10 V only.

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