IRFZ44ESTRL, Infineon HEXFET® N-Channel MOSFET, 60 V drain-source, 48 A continuous drain, 23 mΩ Rds(on) at 10 V, D2PAK surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 48A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 23mOhm @ 29A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1360 pF @ 25 V |
The IRFZ44ESTRL: The D2PAK (TO-263) surface-mount package with a large exposed tab means the thermal path relies on the PCB copper pour and via stitching under the tab to pull heat away.
Sourcing is limited to the surplus and broker market, where availability and pricing vary with inventory age and quantity. Any BOM line using this part should be qualified for a replacement before the next build cycle.
Yes, the IRFZ44ESTRL is listed as obsolete by Infineon. No factory production remains; all sourcing is through the surplus and broker market.