60 V, 48 A N-channel HEXFET in D2PAK
It is packaged in a TO-263-3 (D2PAK) surface-mount package with the tab as the drain connection.
The 60 nC total gate charge at 10 V is moderate; a standard gate driver with 1 A to 2 A peak current can switch it in the 50–100 ns range, but the 1360 pF input capacitance at 25 V drain-source means the driver must supply enough peak current to charge and discharge the gate quickly at high frequency.
175°C junction — military-temperature-range capability
The 110 W power dissipation at case temperature is a package-limited figure; in practice, the D2PAK's thermal resistance to the PCB (junction-to-ambient) is around 40–60°C/W without a heatsink, so sustained high-current operation demands a well-designed copper footprint and possibly forced airflow. The 175°C Tj max gives headroom for transient overloads in harsh environments like engine bay electronics or downhole tools.
For new designs, a pin-compatible replacement should be selected from the same HEXFET family — the IRFZ44N (TO-220) or IRFZ44NS (D2PAK) are common drop-in alternatives with similar Rds(on) and current ratings, though the exact parametric match should be verified against your operating point.