Infineon IRFZ34NSTRLPBF, HEXFET® N-channel MOSFET, 55V Vdss, 29A Id, 40 mOhm Rds(on) at 10V, D2PAK surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 29A (Tc) |
| Power dissipation | 3.8W (Ta), 68W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 700 pF @ 25 V |
The IRFZ34NSTRLPBF: It comes in a D2PAK (TO-263) surface-mount package, well-suited for automated assembly and moderate power dissipation up to 68 W at the case.
At 40 mOhm maximum, the conduction loss at 16 A is about 10 W — within the 68 W case-rated dissipation.
The cut-tape option (CT) is available for prototyping or low-quantity builds. Store the reels in a dry environment.
The maximum gate threshold voltage is 4 V at 250 µA drain current. For full enhancement and the specified 40 mOhm on-resistance, a 10 V gate drive is required.