Infineon HEXFET® series IRFZ34NSPBF, N-Channel MOSFET, 55V Vdss, 29A Id, 40mOhm Rds(on) at 10V, TO-263-3 D2PAK surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 29A (Tc) |
| Power dissipation | 3.8W (Ta), 68W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 700 pF @ 25 V |
The D2PAK (TO-263) surface-mount package with exposed tab allows the 68 W power dissipation at case temperature to be sunk through the PCB copper plane.
The 4 V maximum gate threshold at 250 µA confirms the device needs a 10 V rail for fully enhanced conduction.
Without adequate copper, the 3.8 W ambient-air dissipation limit applies, which constrains continuous current to well below 29 A.
No. The manufacturer lists the IRFZ34NSPBF as active.
Maximum on-resistance is 40 mOhm at 16 A drain current with 10 V gate-source drive.