Infineon HEXFET® IRFZ34EPBF, N-Channel MOSFET, 60 V Vdss, 28 A Id, 42 mOhm Rds(on) at 10 V, TO-220AB, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 28A (Tc) |
| Power dissipation | 68W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 42mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 680 pF @ 25 V |
If your design can tolerate a footprint or gate-drive change, qualifying a current-production 60 V N-channel MOSFET in a TO-220 package is the lower-risk path for new builds.
The 175°C maximum junction is above the typical 150°C ceiling for many commercial MOSFETs, giving extra headroom in a high-ambient enclosure.
For new designs, a current-production 60 V N-channel MOSFET in a TO-220 package should be qualified, as the original part is only available through surplus or broker channels.
The maximum on-resistance is 42 mOhm at a drain current of 17 A and a gate-to-source voltage of 10 V.