IRFU5305PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFU5305PBF, P-Channel MOSFET, 55V Vdss, 31A Id, 65mOhm Rds(on) at 10V, 63nC Qg, IPAK (TO-251AA) through-hole, -55 to 175°C.

Infineon Technologies IRFU5305PBF
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Technical specifications

IRFU5305PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Technical details

Through-hole IPAK — thermal and mounting

Housed in the TO-251AA (IPAK) package with short leads, this is a through-hole part intended for board-level mounting where a surface-mount reflow profile is not available or where the PCB requires mechanical retention.

Gate drive and switching parameters

The gate threshold voltage is specified at 4 V maximum with 250 µA drain current; the recommended drive voltage for minimum on-resistance is 10 V. Input capacitance is 1200 pF at 25 V drain-source — a moderate capacitance that keeps gate-drive losses manageable at switching frequencies typical of load-switch or low-side P-Channel applications. The maximum gate-source voltage is ±20 V, so a 10 V drive rail leaves margin.

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