Infineon HEXFET® IRFU4510PBF N-channel MOSFET, 100 V drain-source, 56 A continuous drain at 25 °C, 13.9 mOhm Rds(on) at 10 V, through-hole IPAK (TO-251AA) package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 56A (Tc) |
| Power dissipation | 143W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 13.9mOhm @ 38A, 10V |
| Gate charge (Qg) (Max) @ vgs | 81 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3031 pF @ 50 V |
The IRFU4510PBF: The ±20 V gate-source maximum gives headroom for 12 V or 15 V gate drive rails without clamping.
Total gate charge is 81 nC at 10 V.
The IRFU4510PBF comes in a through-hole IPAK package with short leads.
The maximum gate-source threshold voltage is 4 V at 100 µA drain current. This means the FET starts conducting when Vgs exceeds about 2–4 V, but the 10 V drive level is needed to achieve the rated 13.9 mOhm Rds(on).