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Infineon Technologies IRFU4510PBF
Infineon Technologies

IRFU4510PBF HEXFET N-Channel MOSFET, 100 V, 56 A, IPAK

MPNIRFU4510PBF
End of Life

Infineon HEXFET® IRFU4510PBF N-channel MOSFET, 100 V drain-source, 56 A continuous drain at 25 °C, 13.9 mOhm Rds(on) at 10 V, through-hole IPAK (TO-251AA) package, -55°C to 175°C junction temperature.

$1.84Ref. price · indicative, final on quote
IRFU4510PBF datasheet
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFU4510PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation143W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs13.9mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs81 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3031 pF @ 50 V

Product details

The IRFU4510PBF: The ±20 V gate-source maximum gives headroom for 12 V or 15 V gate drive rails without clamping.

Gate charge and switching — sizing the driver

Total gate charge is 81 nC at 10 V. The 3031 pF input capacitance at 50 V drain means the driver must source enough current to charge Ciss quickly.

Through-hole IPAK — board-mounting and thermal path

The IRFU4510PBF comes in a through-hole IPAK package with short leads. The -55°C to 175°C junction temperature range suits high-temperature environments.

Frequently asked questions

What is the Vgs threshold of IRFU4510PBF?

The maximum gate-source threshold voltage is 4 V at 100 µA drain current. This means the FET starts conducting when Vgs exceeds about 2–4 V, but the 10 V drive level is needed to achieve the rated 13.9 mOhm Rds(on).