IRFU3910PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-Channel MOSFET, IRFU3910PBF, 100 V Vdss, 16 A continuous drain, 115 mOhm Rds(on) at 10 V, 44 nC gate charge, through-hole IPAK (TO-251AA) package, -55°C to 175°C junction temperature.

Infineon Technologies IRFU3910PBF
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Technical specifications

IRFU3910PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs115mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds640 pF @ 25 V

Technical details

100 V, 16 A N-channel HEXFET in a through-hole IPAK

It comes in a through-hole IPAK (TO-251AA) package with short leads, designed for automated or manual insertion on boards where a surface-mount footprint would compromise thermal dissipation.

115 mOhm on-resistance and 44 nC gate charge — the conduction and switching budget

Total gate charge Qg is 44 nC at 10 V.

175 °C junction rating — high-temperature environments covered

The 175 °C maximum allows this part to run in under-hood automotive compartments, industrial motor drives, or sealed power supplies where ambient temperatures exceed 85 °C.

Active production, ROHS3, and the IPAK footprint

It is ROHS3 compliant, with no lead-free exemption expiry to track. The IPAK (TO-251AA) package uses a through-hole mounting style; the short leads reduce board height compared to a standard TO-220, suiting it for space-constrained assemblies.

IRFU3910PBF
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