100 V, 16 A N-channel HEXFET in a through-hole IPAK
It comes in a through-hole IPAK (TO-251AA) package with short leads, designed for automated or manual insertion on boards where a surface-mount footprint would compromise thermal dissipation.
115 mOhm on-resistance and 44 nC gate charge — the conduction and switching budget
This on-resistance sets the conduction loss floor: at 10 A, I²R loss is 11.5 W, which must be sunk through the IPAK package's thermal path to the heatsink tab. Total gate charge Qg is 44 nC at 10 V. A 44 nC gate at 100 kHz switching frequency draws 4.4 mA from the gate driver — well within the capability of a standard MOSFET driver IC. The 640 pF input capacitance at 25 V drain-source helps the designer estimate the gate-drive power and switching transition times.
175 °C junction rating — high-temperature environments covered
The 175 °C maximum allows this part to run in under-hood automotive compartments, industrial motor drives, or sealed power supplies where ambient temperatures exceed 85 °C. The 79 W power dissipation at case temperature assumes an adequate heatsink; derate linearly above 25 °C per the datasheet curve.
Active production, ROHS3, and the IPAK footprint
It is ROHS3 compliant, with no lead-free exemption expiry to track. The IPAK (TO-251AA) package uses a through-hole mounting style; the short leads reduce board height compared to a standard TO-220, suiting it for space-constrained assemblies.