75 V, 56 A N-channel — 9 mOhm conduction floor
The IRFU3607PBF: The 9 mOhm maximum on-resistance at 46 A, 10 V gate drive sets the conduction loss floor.
Gate charge and switching budget
Total gate charge is 84 nC at 10 V. Input capacitance measures 3070 pF at 50 V drain-source — the Miller plateau region determines the switching loss, not the Ciss alone.
175 °C junction — extended thermal headroom
The 140 W power dissipation at case temperature 25 °C assumes an infinite heatsink; real-world derating follows the junction-to-case thermal resistance curve in the datasheet.