75 V, 56 A N-channel — 9 mOhm conduction floor
Total gate charge is 84 nC at 10 V. Input capacitance measures 3070 pF at 50 V drain-source — the Miller plateau region determines the switching loss, not the Ciss alone.
IRFU3607PBF HEXFET N-Channel MOSFET, 75V 56A, 9mOhm Rds(on)
MPNIRFU3607PBF
End of Life
Infineon HEXFET IRFU3607PBF, N-Channel MOSFET, 75 V Vdss, 56 A Id, 9 mOhm Rds(on) at 10 V, 84 nC Qg, 175 °C Tj, Through-Hole IPAK (TO-251AA).
$1.6Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 56A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 46A, 10V |
| Gate charge (Qg) (Max) @ vgs | 84 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3070 pF @ 50 V |
Product details
Frequently asked questions
What is the Rds(on) of the IRFU3607PBF?
Maximum on-resistance is 9 mOhm at 46 A drain current with 10 V gate drive, measured at 25 °C junction temperature.