IRFU1018EPBF, N-Channel HEXFET® MOSFET, 60 V drain-source, 56 A switching current, 8.4 mOhm Rds(on) at 10 V, 110 W power dissipation, IPAK through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 110.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0023 |
| Status | Active |
| Supply voltage | 60.0 |
| Vgs(Th) (Max) @ id | 4 V @ 100µA |
| Switching current | 56.0 |
| Rds on (Max) @ id, vgs | 8.4mOhm @ 47 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
The IRFU1018EPBF is an N-channel HEXFET power MOSFET rated for 60 V drain-source breakdown and 56 A continuous switching current. Packaged in a through-hole IPAK, it delivers 110 W of power dissipation with a maximum Rds(on) of 8.4 mOhm at a 47 A drain current and 10 V gate drive.
Maximum Rds(on) is 8.4 mOhm at 47 A, 10 V. Gate charge is 69 nC at 10 V.
Engineers need full specifications for design validation.
Buyers need to source the part quickly.
Availability impacts production timelines.
Budgeting and cost comparison for procurement.
Maintenance techs need drop-in replacements.
Key parameters for switching performance.