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Infineon Technologies IRFU1018EPBF — Discrete Semiconductors
Infineon Technologies

IRFU1018EPBF N-Channel MOSFET, 60V 56A, 8.4mOhm, IPAK

MPNIRFU1018EPBF
Active

IRFU1018EPBF, N-Channel HEXFET® MOSFET, 60 V drain-source, 56 A switching current, 8.4 mOhm Rds(on) at 10 V, 110 W power dissipation, IPAK through-hole package, -55°C to 175°C junction temperature.

$0.51Ref. price · indicative, final on quote
IRFU1018EPBF datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

IRFU1018EPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w110.0
Package_typeBulk
Capacitance_uf0.0023
Product_statusActive
Supply_voltage_v60.0
Vgs(Th) (Max) @ id4 V @ 100µA
Switching_current_a56.0
Rds on (Max) @ id, vgs8.4mOhm @ 47 A, 10 V
Gate charge (Qg) (Max) @ vgs69 nC @ 10 V

Product details

60 V N-channel HEXFET for high-efficiency switching

The IRFU1018EPBF is an N-channel HEXFET power MOSFET rated for 60 V drain-source breakdown and 56 A continuous switching current. Packaged in a through-hole IPAK, it delivers 110 W of power dissipation with a maximum Rds(on) of 8.4 mOhm at a 47 A drain current and 10 V gate drive. The junction temperature range spans -55°C to 175°C, making it suited for motor drives, DC-DC converters, and power supplies in industrial or automotive environments where thermal cycling is a factor.

Rds(on) and gate charge — switching loss trade-off

Maximum Rds(on) is 8.4 mOhm at 47 A, 10 V. Gate charge is 69 nC at 10 V.

Frequently asked questions

What is the datasheet for IRFU1018EPBF?

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What is the replacement for IRFU1018EPBF?

Maintenance techs need drop-in replacements.

What are the Rds(on) and gate charge of IRFU1018EPBF?

Key parameters for switching performance.