Infineon Technologies · HEXFET® Series
Infineon IRFTS9342TRPBF HEXFET P-Channel MOSFET, 30V Vdss, 5.8A Id, 40mOhm Rds(on) at 10V Vgs, ±20V Vgs(max), SOT-23-6 package, -55°C to 150°C operating temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5.8A (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 |
| Vgs(th) (Max) @ id | 2.4V @ 25µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 5.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 595 pF @ 25 V |
The IRFTS9342TRPBF: Maximum Rds(on) is 40 mOhm at 5.8 A and 10 V Vgs. Total gate charge is 12 nC at 10 V.
The SOT-23-6 (6-TSOP supplier package) is a compact surface-mount footprint with a 2 W power dissipation rating at 25°C ambient.
