IRFTS8342TRPBF, HEXFET® series, N-Channel MOSFET, 30 V Vdss, 8.2 A continuous drain, 19 mOhm Rds(on) max at 10 V, 4.8 nC gate charge, SOT-23-6 package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 8.2A (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 |
| Vgs(th) (Max) @ id | 2.35V @ 25µA |
| Rds on (Max) @ id, vgs | 19mOhm @ 8.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.8 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 560 pF @ 25 V |
The SOT-23-6 package (supplier device package 6-TSOP) limits maximum power dissipation to 2 W at 25°C ambient. In continuous 8.2 A operation, the 19 mOhm Rds(on) produces about 1.28 W of conduction loss at 25°C junction — within the package limit but leaving little margin for switching losses or elevated ambient temperatures.
The IRFTS8342TRPBF is an active-production part. Submit a request with your target quantity and delivery window for a firm quote.
This is the value used for conduction-loss calculations in the design.
Yes, it is classified as ROHS3 compliant, meeting the latest Restriction of Hazardous Substances directive requirements.
The maximum total gate charge is 4.8 nC at 4.5 V gate-to-source voltage. This low charge enables direct drive from low-voltage logic outputs.