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Infineon Technologies IRFSL7734PBF — Discrete Semiconductors

IRFSL7734PBF N-Channel MOSFET, 75 V, 3.5 mOhm, TO-262

MPNIRFSL7734PBF
Active

Infineon Technologies HEXFET®, StrongIRFET™ series N-Channel MOSFET, IRFSL7734PBF, 75 V, 183 A, 3.5 mOhm, TO-262, Through Hole, Bulk.

$1.37Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRFSL7734PBF specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power290.0
Package_typeBulk
Capacitance_uf0.0101
StatusActive
Supply voltage75.0
Vgs(Th) (Max) @ id3.7 V @ 250µA
Switching current183.0
Rds on (Max) @ id, vgs3.5mOhm @ 100 A, 10 V
Gate charge (Qg) (Max) @ vgs270 nC @ 10 V

Product details

The IRFSL7734PBF is an N-channel power MOSFET from Infineon's HEXFET and StrongIRFET series, rated for 75 V drain-source breakdown and 183 A switching current. Gate charge totals 270 nC at 10 V — for a 100 kHz switching frequency the gate driver must supply 27 mA average to charge and discharge the gate, plus the peak current to overcome the Miller plateau. The ±20 V Vgs max gives margin for ringing on the gate node in a hard-switched motor-drive layout.

Thermal and deployment context

The TO-262 through-hole package bolts to a heatsink — the thermal resistance from junction to case determines the derating; at 175 °C junction the continuous current must be reduced per the datasheet curve.

Frequently asked questions

What is IRFSL7734PBF's listed Vgs rating?

The maximum gate-source voltage is ±20 V. Exceeding this risks rupturing the gate oxide; a gate clamp zener or a series resistor to limit ringing is common in layouts with long gate traces.