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Infineon Technologies IRFSL7537PBF

IRFSL7537PBF MOSFET N-CH 60V 173A TO-262, 3.3mOhm Rds(on)

MPNIRFSL7537PBF
End of Life

Infineon HEXFET®, StrongIRFET™ N-Channel MOSFET, IRFSL7537PBF, 60 V Vdss, 173 A continuous drain, 3.3 mOhm Rds(on) at 10 V, 210 nC gate charge, TO-262 through-hole, -55°C to 175°C.

$2.99Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFSL7537PBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C173A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id3.7V @ 150µA
Rds on (Max) @ id, vgs3.3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs210 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7020 pF @ 25 V

Product details

60 V, 173 A, 3.3 mOhm — the conduction-loss floor

Its headline figure is a maximum Rds(on) of 3.3 mOhm at Vgs=10 V and Id=100 A — that's the voltage drop you pay per amp, and at 173 A continuous drain current the on-state dissipation stays under 100 W at 25°C case temperature. The 60 V drain-to-source rating puts it squarely in the 48 V bus / 12 V automotive / battery-switch class, not the 100 V+ motor-drive tier. The 210 nC total gate charge at Vgs=10 V tells you this is a high-gate-charge part — expect to budget a gate driver that can source several amps peak to hit the target switching frequency. At 100 kHz the average gate drive current is 21 mA, but the peak pulse current during the Miller plateau is what determines the rise time. Pair it with a driver rated for at least 2 A peak output.

Package and thermal reality — TO-262 through-hole

The TO-262AA (I²Pak) package is a through-hole variant of the D²Pak, with long leads that make it easier to hand-solder or rework than a surface-mount part. The exposed metal tab on the back is the drain — it needs a good thermal path to the heatsink. The 230 W power dissipation rating assumes the case is held at 25°C; in practice, derate based on the junction-to-case thermal resistance. Mounting is through-hole, so the PCB needs drilled holes for the leads and a thermal pad or heatsink interface for the tab. The lead pitch and hole pattern follow the TO-262 standard — no special footprint beyond what any TO-220/TO-262 socket or solder pad provides.

For a drop-in replacement, confirm the TO-262 footprint and gate-drive requirements against the BOM.

Frequently asked questions

What is the Rds(on) of the IRFSL7537PBF at 10 V?

This is the on-resistance at the recommended drive voltage — expect it to rise with junction temperature per the normalised curve in the datasheet.

Is the IRFSL7537PBF RoHS compliant?

Yes, it is listed as ROHS3 compliant.