The 2.5 mOhm maximum on-resistance at 100 A, 10 V gate drive sets the conduction loss floor for a high-current switch — at 100 A the dissipation is 25 W, which the 208 W package rating can handle with adequate heatsinking.
Gate charge and drive budget
Total gate charge is 135 nC at 10 V.
Through-hole TO-262 — thermal and mechanical fit
The TO-262-3 (I²Pak, TO-262AA) package has long leads for through-hole mounting. The junction-to-case thermal resistance is not listed here, but the 208 W dissipation rating at 25°C case implies a low RthJC, typical for this package class.
This makes the part suitable for high-reliability and harsh-environment applications such as automotive under-hood, industrial motor drives, and power converters where ambient temperatures exceed 85°C. The 175°C maximum junction allows headroom for high-current operation with thermal cycling.
ROHS3 compliant (lead-free). The series is HEXFET and StrongIRFET, both established Infineon power MOSFET families with broad distribution support.