2.5 mOhm at 100 A — conduction loss floor for a 40 V rail
The 2.5 mOhm maximum on-resistance at 100 A, 10 V gate drive sets the conduction loss floor for a high-current switch — at 100 A the dissipation is 25 W, which the 208 W package rating can handle with adequate heatsinking.
Gate charge and drive budget
Total gate charge is 135 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 13.5 mA — well within a standard gate-driver IC's capability. The input capacitance (Ciss) is 4730 pF at 25 V drain-source, which influences the drive's rise/fall time and switching loss.
Through-hole TO-262 — thermal and mechanical fit
The TO-262-3 (I²Pak, TO-262AA) package has long leads for through-hole mounting. The junction-to-case thermal resistance is not listed here, but the 208 W dissipation rating at 25°C case implies a low RthJC, typical for this package class.
Temperature range and operating environment
This makes the part suitable for high-reliability and harsh-environment applications such as automotive under-hood, industrial motor drives, and power converters where ambient temperatures exceed 85°C. The 175°C maximum junction allows headroom for high-current operation with thermal cycling.
Lifecycle and compliance
ROHS3 compliant (lead-free). The series is HEXFET and StrongIRFET, both established Infineon power MOSFET families with broad distribution support.