200 V, 72 A N-channel — where this HEXFET fits
The IRFSL4127PBF is a 200 V, 72 A N-channel HEXFET in a TO-262 through-hole package.
Rds(on) at junction temperature — the real loss number
The 22 mOhm max is specified at 25°C junction with 10 V gate drive. At 125°C junction — a realistic operating point in a 375 W dissipation budget — Rds(on) typically rises by a factor of 1.6 to 1.8. Budget 35–40 mOhm hot for loss calculations, not the cold headline. Gate charge is 150 nC at 10 V. That is a moderate Qg for a 200 V, 72 A die — expect a gate-driver capable of sourcing 2–3 A peak to keep switching edges clean at 50–100 kHz. The 5380 pF input capacitance at 50 V Vds confirms the driver sees a significant capacitive load.
Sourcing and quoting for the BOM line
The through-hole TO-262 package is a standard pick-and-place candidate for wave-solder assembly.
