Infineon HEXFET IRFSL3207ZPBF, N-Channel MOSFET, 75 V Vdss, 120 A Id, 4.1 mOhm Rds(on) at 75 A 10 V, 170 nC Qg, TO-262-3 through-hole package, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 4.1mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 170 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6920 pF @ 50 V |
Total gate charge is 170 nC at 10 V. A driver sourcing 1 A peak charges the gate in roughly 170 ns; at 100 kHz switching, the average gate-drive current is 17 mA.
Housed in a TO-262-3 (I²Pak) through-hole package with long leads, the supplier device package is TO-262.
This is the value used for conduction-loss calculations in the design.