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Infineon Technologies IRFSL3207ZPBF

IRFSL3207ZPBF HEXFET N-Channel MOSFET, 75V 120A TO-262

MPNIRFSL3207ZPBF
End of Life

Infineon HEXFET IRFSL3207ZPBF, N-Channel MOSFET, 75 V Vdss, 120 A Id, 4.1 mOhm Rds(on) at 75 A 10 V, 170 nC Qg, TO-262-3 through-hole package, -55 to 175 °C.

$3.39Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFSL3207ZPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs4.1mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6920 pF @ 50 V

Product details

Gate charge and switching speed — what 170 nC means for the driver

Total gate charge is 170 nC at 10 V. A driver sourcing 1 A peak charges the gate in roughly 170 ns; at 100 kHz switching, the average gate-drive current is 17 mA. The 6920 pF input capacitance at 50 V drain-source gives a rough Miller-plateau time constant — budget a gate resistor to control ringing on the switching node.

Package and thermal path — TO-262 through-hole

Housed in a TO-262-3 (I²Pak) through-hole package with long leads, the supplier device package is TO-262. The 300 W power dissipation at case temperature is the absolute maximum; the real thermal budget depends on the heatsink and airflow across the tab. The -55 °C to 175 °C junction range covers military-temperature applications — the upper limit exceeds the more common 150 °C ceiling, giving extra headroom in high-ambient enclosures.

Frequently asked questions

What is the Rds(on) of IRFSL3207ZPBF?

This is the value used for conduction-loss calculations in the design.