Infineon Technologies · HEXFET® Series
IRFSL3206PBF, HEXFET® N-Channel MOSFET, 60 V Vdss, 120 A Id, 3 mOhm Rds(on) max at 75 A, TO-262 through-hole package, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 3mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 170 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6540 pF @ 50 V |
The IRFSL3206PBF: Total gate charge is 170 nC at 10 V Vgs. The 6540 pF input capacitance at 50 V drain-source influences the Miller plateau.
The TO-262 (I²Pak) through-hole package has three long leads that extend through the board — the centre drain tab is the primary thermal path. ROHS3 compliant, no exemptions.
