IRFS7734TRLPBF

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon HEXFET®, StrongIRFET™ series N-Channel MOSFET, IRFS7734TRLPBF, 75 V, 183 A, 3.5 mOhm @ 100 A, 10 V, 270 nC Qg, TO-263-3 D2Pak, -55 to 175 °C.

Infineon Technologies IRFS7734TRLPBF
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[IN STOCK] In Stock: 90 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS7734TRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C183A (Tc)
Power dissipation290W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.7V @ 250µA
Rds on (Max) @ id, vgs3.5mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs270 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10150 pF @ 25 V

Technical details

That Qg tells you the gate-driver current needed for a target frequency: at 100 kHz switching, the average gate current is 27 mA, well within a standard driver's capability. The 6 V and 10 V drive voltage levels let you trade Rds(on) against gate-drive loss — 10 V gives the lowest on-resistance, 6 V reduces driver dissipation at the cost of higher Rds(on).

D2Pak rework — the tab is the thermal path

The TO-263-3 (D2Pak) surface-mount package has a large exposed drain tab that carries the bulk of the heat. Rework: the tab's thermal mass means a hot-air station needs a preheat plate under the board to avoid lifting the pad when the tab wets.

ROHS3 compliant. No official successor or second-source cross-reference is listed, so the BOM relies on this single source — budget for a qualified alternate if dual-sourcing is required.

IRFS7734TRLPBF
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