Infineon HEXFET®, StrongIRFET™ IRFS7540TRLPBF, N-Channel MOSFET, 60V Vdss, 110A Id, 5.1mOhm Rds(on) @ 65A/10V, 130nC Qg, PG-TO263-3, -55 to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 110A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.7V @ 100µA |
| Rds on (Max) @ id, vgs | 5.1mOhm @ 65A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4555 pF @ 25 V |
The 5.1 mOhm Rds(on) at 65 A and 10 V is within the 160 W package limit at case temperature.
The tab is the drain — no isolation, so the heatsink plane carries the full 60 V rail. The part ships on tape and reel, which is the standard for automated pick-and-place; cut tape is also available for prototype runs. Orientation is unambiguous: the tab is the drain, the gate and source pins are clearly marked on the package body.
The maximum Rds(on) is 5.1 mOhm at a drain current of 65 A and a gate-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in your power stage.
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