IRFS7537TRLPBF

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon IRFS7537TRLPBF, HEXFET® StrongIRFET™ series, N-Channel MOSFET, 60 V Vdss, 173 A Id, 3.3 mOhm Rds(on) @ 100 A/10 V, 210 nC Qg, TO-263-3 (D²Pak), -55 to 175 °C.

Infineon Technologies IRFS7537TRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS7537TRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C173A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.7V @ 150µA
Rds on (Max) @ id, vgs3.3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs210 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7020 pF @ 25 V

Technical details

The Infineon IRFS7537TRLPBF is a 60 V, 173 A N-channel MOSFET from the HEXFET® StrongIRFET™ series, housed in a surface-mount D²Pak (TO-263-3) with the exposed tab for thermal transfer to the board copper. Gate charge is 210 nC at 10 V; plan the gate-driver current budget around that figure at the target switching frequency.

Thermal and voltage headroom for 48 V bus designs

With a 60 V drain-source rating, this MOSFET carries comfortable margin for 48 V nominal systems (54 V peak under float) — the 60 V Vdss covers transients without avalanche stress. The D²Pak footprint uses the large copper pad on the PCB as the primary heatsink — the thermal vias under the tab are not optional for sustained 100 A+ loads.

IRFS7537TRLPBF
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