Infineon Technologies · HEXFET®, StrongIRFET™ Series
Infineon HEXFET®, StrongIRFET™, IRFS7534TRLPBF, N-Channel MOSFET, 60 V Vdss, 195 A Id, 2.4 mOhm Rds(on) at 100 A, 10 V, PG-TO263-7 package, -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 294W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 3.7V @ 250µA |
| Rds on (Max) @ id, vgs | 2.4mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 279 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10034 pF @ 25 V |
The IRFS7534TRLPBF: The headline number that drives the heatsink decision is the 2.4 mOhm max on-resistance at 100 A with 10 V gate drive — that's the conduction loss floor for a high-current switch in a motor drive or DC-DC converter.
Surface-mount in a TO-263-7 D²Pak (6 leads plus tab), supplier device package PG-TO263-7. The ±20 V maximum gate-source voltage gives margin for gate-drive overshoot on long PCB traces.
