Skip to main content
Infineon Technologies IRFS7534TRLPBF

IRFS7534TRLPBF N-Channel MOSFET, 60V 195A, 2.4mOhm Rds(on)

MPNIRFS7534TRLPBF
End of Life

Infineon HEXFET®, StrongIRFET™, IRFS7534TRLPBF, N-Channel MOSFET, 60 V Vdss, 195 A Id, 2.4 mOhm Rds(on) at 100 A, 10 V, PG-TO263-7 package, -55°C to 175°C.

$3.09Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS7534TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation294W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id3.7V @ 250µA
Rds on (Max) @ id, vgs2.4mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs279 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10034 pF @ 25 V

Product details

60 V, 195 A — the conduction-loss story

The IRFS7534TRLPBF: The headline number that drives the heatsink decision is the 2.4 mOhm max on-resistance at 100 A with 10 V gate drive — that's the conduction loss floor for a high-current switch in a motor drive or DC-DC converter.

Gate charge and switching budget

Total gate charge is 279 nC at 10 V, with an input capacitance of 10034 pF at 25 V drain-source.

Package and thermal path

Surface-mount in a TO-263-7 D²Pak (6 leads plus tab), supplier device package PG-TO263-7. The exposed copper tab on the bottom is the main thermal path — the PCB copper area under that tab sets the junction-to-ambient thermal resistance. A 294 W power dissipation rating at case temperature means the tab must be soldered to a substantial copper pour with thermal vias to inner layers. The ±20 V maximum gate-source voltage gives margin for gate-drive overshoot on long PCB traces.

Frequently asked questions

What is the Rds(on) of IRFS7534TRLPBF?

The maximum on-resistance is 2.4 mOhm at 100 A drain current with 10 V gate drive. This is the spec that determines conduction loss in a high-current switch application.

Is IRFS7534TRLPBF RoHS compliant?

Yes, it is listed as ROHS3 Compliant.