IRFS7530TRLPBF

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon HEXFET®, StrongIRFET™ N-Channel MOSFET, 60 V, 195 A, 2 mOhm Rds(on) at 100 A, 10 V, 411 nC gate charge, PG-TO263-2 (D2PAK), -55°C to 175°C.

Infineon Technologies IRFS7530TRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS7530TRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.7V @ 250µA
Rds on (Max) @ id, vgs2mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs411 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13703 pF @ 25 V

Technical details

60 V, 195 A N-channel — the low-loss power switch for high-current rails

The IRFS7530TRLPBF is an Infineon N-channel MOSFET from the HEXFET and StrongIRFET series, built for applications where the load current pushes past 100 A and the conduction loss budget is tight.

Gate charge and switching — sizing the driver for the load

Total gate charge is 411 nC at 10 V. Input capacitance is 13703 pF at 25 V drain-source. The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V. The maximum gate-source voltage is ±20 V.

Temperature tolerance and deployment envelope

The threshold voltage maximum is 3.7 V at 250 µA drain current — at cold start the threshold rises, so the gate drive must still exceed 6 V to guarantee turn-on at -55°C.

IRFS7530TRLPBF
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