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Infineon Technologies IRFS7434TRLPBF
Infineon Technologies

IRFS7434TRLPBF N-Channel MOSFET, 40 V, 1.6 mOhm, D2PAK

MPNIRFS7434TRLPBF
End of Life

Infineon IRFS7434TRLPBF, HEXFET® StrongIRFET™ series, N-channel MOSFET, 40 V Vdss, 195 A Id, 1.6 mOhm Rds(on) at 10 V, 324 nC Qg, D2PAK (TO-263) surface mount, -55 to 175 °C.

$2.94Ref. price · indicative, final on quote
IRFS7434TRLPBF datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFS7434TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation294W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs1.6mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs324 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10820 pF @ 25 V

Product details

324 nC gate charge — the driver budget for switching frequency

Total gate charge at 10 V is 324 nC. To switch this FET in 100 ns, the gate driver must source over 3 A peak. The input capacitance of 10820 pF at 25 V drain-source reinforces the same message: this is a large-die part designed for low-frequency hard switching (up to maybe 50–100 kHz) or for synchronous rectification where the FET is on most of the cycle. A small SOT-23 gate driver will struggle; plan for a dedicated driver with at least 4 A peak source-sink capability.

175 °C junction — military-temperature silicon in a D2PAK

The 175 °C Tj max is unusual for a 40 V trench MOSFET — most competitors stop at 150 °C. This part can live in an engine bay, a hot-swap supply, or a telecom rectifier where the ambient near the FET hits 125 °C.

No last-time-buy window to track, no successor to qualify. The part is ROHS3 compliant.

Frequently asked questions

What is the equivalent or replacement for IRFS7434TRLPBF?

The IPD50R950CEAUMA1 is a CoolMOS™ CE device with a 500 V drain-source rating and 950 mOhm Rds(on) — it is not a functional substitute for a 40 V, 1.6 mOhm part. For a drop-in alternate, verify the package (D2PAK), gate charge, and Rds(on) against your thermal budget.

Does IRFS7434TRLPBF require a heatsink?

At 195 A continuous drain current and 1.6 mOhm Rds(on), the conduction loss alone is over 60 W. The 294 W dissipation ceiling is only reachable with the case held at 25 °C — in practice, at any reasonable ambient temperature, a heatsink or forced airflow is required to keep the junction below 175 °C.