IRFS7434TRL7PP

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon HEXFET®, StrongIRFET™ series, IRFS7434TRL7PP, N-Channel MOSFET, 40V Vdss, 240A Id, 1mOhm Rds(on) @ 100A, 10V, D2PAK-7, -55°C to 150°C.

Infineon Technologies IRFS7434TRL7PP
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFS7434TRL7PP specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C240A (Tc)
Power dissipation245W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs315 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10250 pF @ 25 V

Technical details

1 mOhm Rds(on) at 100 A — the switching loss floor

The IRFS7434TRL7PP: The device is rated for a drain-to-source voltage of 40 V and a continuous drain current of 240 A at a case temperature of 25 °C.

Gate charge and input capacitance — what the driver sees

The total gate charge is 315 nC at 10 V, and the input capacitance is 10250 pF at a 25 V drain-source bias. These numbers tell the gate-driver designer what current is needed to hit the target switching frequency. A 315 nC gate charge at 100 kHz switching requires an average gate drive current of about 31.5 mA, which is well within the capability of a standard MOSFET driver, but the peak current during the Miller plateau needs to be higher to avoid excessive switching losses.

IRFS7434TRL7PP
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